Search results for " PLD"

Indium Tin Oxide Photoablation: Spectroscopic Analysis of the Plume

1999

Polycrystalline MoO3 films fabricated by pulsed laser deposition for infrared polarization manipulation

2022

We performed infrared optical characterization of polycrystalline MoO3 films deposited by pulsed laser deposition on fused silica substrates. Several samples have been fabricated using different parameters such as temperature and oxygen pressure. Our analysis shows that under appropriate fabrication conditions it is possible to obtain a dominant α-phase film, with a well-defined, normal to surface (z-axis) orientation. These results are confirmed by reflection spectra performed at 45° incidence angle revealing a strong modulation of the sharp z-phonon Reststrahlen band as a function of the incident field linear polarization.

Fabrication and characterization of microscale HfO2-based Memristors

2017

Memristors are metal/insulator/metal devices whose resistance can be switched between two different states (i.e. the low resistive state LRS, and the high resistive state, HRS) by applying a proper voltage value over the two metal contacts [1], [2]. Their simple structure makes memristors prone to extreme down scaling and 3-D stacking potentiality, and excellent compatibility with the complementary metal-oxide-semiconductor (CMOS) technology. Moreover, because of their low power consumption and high speed, memristors are rightly considered the elemental bricks for a next generation of high-density nonvolatile memories. HfO2 has attracted much attention as an oxide material for memristor app…

Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition

2014

The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.